Photodynamics of Si=O defects reported in JPC C

Check out Yinan’s new paper in JPC C on the photodynamics of silicon-oxygen double (Si=O) bonds.  Though Si=O defects have previously been hypothesized to be the source of the photoluminescence of oxidized silicon nanocrystals, we show that excited Si=O bonds can undergo efficient non-radiative decay via conical intersection on timescales shorter than the experimental lifetime.